2001. 6. 11 1/2 semiconductor technical data KDS135S silicon epitaxial planar diode revision no : 0 high voltage switching. features high reliability. small surface mounting type (sot-23). maximum rating (ta=25 1 ) dim millimeters 1. nc 2. anode 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 - 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 300 v reverse voltage v r 250 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d 150 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =100ma - 1.0 1.2 v reverse current i r(1) v r =250v - 0.04 0.2 a i r(2) v r =300v - - 100 total capacitance c t v r =0v, f=1mhz - 1.35 3 pf reverse recovery time t rr i r =30ma, i f =30ma - 30 100 ns type name marking lot no. j a
2001. 6. 11 2/2 revision no : 0 KDS135S c - v r reverse voltage v (v) 0102030 reverse current i (na) t r 1.0 1.1 1.2 1.3 1.4 r 1.5 ta=25 c f=1mhz ta=25 c ta=25 c i - v rr r reverse voltage v (v) 0 0.1 t terminal capacitance c (pf) 50 100 150 200 250 300 1 10 100 forward current i ( a) f forward voltage v (mv) f i - v f f 0 200 400 600 800 1000 1200 0.0001 0.001 0.01 0.1 1 2 3 4 5 10 10 10 10 10
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